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bhz100

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تمامی مطالب نوشته شده توسط bhz100

  1. bhz100
    سلام. لطفاً [h=1]A simple model for delta‐doped field‐effect transistor electronic states[/h] [Hidden Content]
  2. bhz100
    با سلام. لطفاً [Hidden Content] [Hidden Content]
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    سلام. [h=1]Self-Gating Effect in the Electron Y-Branch Switch[/h] [Hidden Content]
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    سلام. [h=1]Self-gating in an electron Y-branch switch at room temperature[/h] [Hidden Content]
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    سلام. [h=1]Nonlinear electrical properties of three-terminal junctions[/h] [Hidden Content]
  6. bhz100
    لطفاً این مقاله رو هم لطف کنید... [h=1]Three-terminal ballistic junctions: new building blocks for functional devices in nanoelectronics[/h] [Hidden Content]
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    سلام. [h=1]Diode and transistor behaviors of three-terminal ballistic junctions[/h] [Hidden Content]
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    salam. lotfan [h=1]Microwave rectification in ballistic nanojunctions at room temperature[/h] [Hidden Content]
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    سلام. [h=1]Room‐temperature exciton optical absorption peaks in InGaAsP/InP multiple quantum wells[/h]M. Sugawara, T. Fujii, S. Yamazaki, and K. Nakajima [Hidden Content]
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    سلام. [h=1]Fundamental studies and device application of δ-doping in GaAs Layers and in AlxGa1−xAs/GaAs heterostructures[/h] K. Ploog, M. Hauser, A. Fischer [Hidden Content]
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    سلام. [h=1]Schottky-barrier tunneling spectroscopy for the electronic subbands of a δ-doping layer[/h] M. Zachau, F. Koch [Hidden Content]
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    سلام. لطفاً [h=1]Unified disorder induced gap state model for insulator–semiconductor and metal–semiconductor interfaces[/h]Author(s): Hasegawa, Hideki , Ohno, Hideo [Hidden Content]
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    سلام. [h=1]Electrical transport in open and closed systems[/h] R. Landauer [Hidden Content]
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    سلام . لطفاً [h=1]Conductance characteristics of ballistic one‐dimensional channels controlled by a gate electrode[/h] Hirayama, Y and Saku, T [Hidden Content]
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    سلام. لطفاً [h=1]Quasi one-dimensional in-plane-gate field-effect-transistor[/h] U. Meiners, H. Brugger, B.E. Maile, C. Wölk, F. Koch [Hidden Content]
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    [h=1]n‐ and p‐type in‐plane gated field effect transistors directly written on a semi‐insulating GaAs substrate[/h] Author(s): Hirayama, Yhttp://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=4879133&url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel5%2F4816218%2F4879112%2F04879133.pdf%3Farnumber%3D4879133
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    سلام. [h=1]Novel in situ electrochemical technology for formation of oxide‐ and defect‐free Schottky contact to GaAs and related low‐dimensional structures[/h]Author(s): Hashizume, Tamotsu [Hidden Content]
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    سلام . لطفاً این مقاله رو اگه دسترسی دارین... Schottky Contacts on n-InP with High Barrier Heights and Reduced Fermi-Level Pinning by a Novel In Situ Electrochemical Process Nan-Jian Wu, Tamotsu Hashizume, Hideki Hasegawa, Yoshihito Amemiya [Hidden Content]
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    سلام. لطفاً [h=1]Fabrication and characterization of quantum wire transistors with Schottky in‐plane gates formed by an in situ electrochemical process[/h] Author(s): Hasegawa, Hidekihttp://ieeexplore.ieee.org/xpl/login.jsp?tp=&arnumber=4964076&url=http%3A%2F%2Fieeexplore.ieee.org%2Fiel5%2F4915583%2F4964019%2F04964076.pdf%3Farnumber%3D4964076
  20. bhz100
    سلام. لطفاً Electrical Properties of Nanometer-Sized Schottky Contacts for Gate Control of III–V Single Electron Devices and Quantum Devices Taketomo Sato,, Seiya Kasai and Hideki Hasegawa [Hidden Content]
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